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Cascadable Amplifier
10 to 1200 MHz
A16-2/ SMA16-2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
V2
1
Electrical Specifications: Z
0
= 50
, V
CC
= +15 V
DC
Parameter
Typical
Guaranteed
25oC
0o to 50oC
-54o to +85oC*
Frequency
MHz
5-1300
10-1200
10-1200
Small Signal Gain (min)
dB
13.0
12.0
11.5
Gain Flatness (max)
dB
±0.2
±0.5
±0.7
Reverse Isolation
dB
16
Noise Figure (max)
dB
3.5
4.0
4.5
Power Output
@ 1 dB comp. (min)
dBm
6.0
5.0
4.5
IP3
dBm
+18
IP2
dBm
+28
Second Order Harmonic IP
dBm
+34
VSWR Input / Output (max)
1.5:1 / 1.5:1
1.9:1 / 1.9:1
2.0:1 / 2.0:1
DC Current @ 15 Volts (max)
mA
15
17
18
Units
Features
LOW NOISE: 3.5 dB (TYP.)
HIGH EFFICIENCY: 15 mA (TYP.) @ +5 Volts
GOOD DYNAMIC RANGE: 102.5 dB (TYP.) in 1 MHz BW
LOW VSWR: <1.5:1 (TYP.)
Description
The A16-2 RF amplifier is a discrete thin film hybrid design, which
incorporates the use of thin film manufacturing processes for
accurate performance and high reliability.
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency range.
An active DC biasing network is used for temperature-stable
performance, in addition to an RF Choke, used for power supply
decoupling.
Both TO-8 and Surface Mount packages are hermetically sealed,
and MIL-STD-883 environmental screening is available
.
Product Image
Ordering Information
Part Number
Package
A16-2
TO-8
SMA16-2
Surface Mount
CA16-2
SMA Connectorized
Absolute Maximum Ratings
Parameter
Absolute
Maximum
Storage Temperature
-62oC to +125oC
Case Temperature
+125oC
DC Voltage
+8 V
Continuous Input Power
+13 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 μsec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125oC
Thermal Data: V
CC
= +15 V
DC
Parameter
Rating
Thermal Resistance θ
jc
45oC/W
Transistor Power Dissipation P
d
0.051 W
Junction Temperature Rise
Above Case T
jc
+2oC
* Over temperature performance limits for part number CA16-2, guaranteed from 0
o
C to +50
o
C only.