參數(shù)資料
型號: SIGC42T120CS2
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT Chip in NPT-technology
中文描述: 在不擴散核武器條約IGBT芯片技術
文件頁數(shù): 1/4頁
文件大?。?/td> 75K
代理商: SIGC42T120CS2
SIGC42T120CS2
Edited by INFINEON Technologies AI PS DD HV3, L 7151-T, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology 175μm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
IGBT Modules
Applications:
drives, SMPS, resonant
applications
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-
A4338-A101
SIGC42T120CS2
1200V
25A
6.59 x 6.49 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
6.59 x 6.49
Emitter pad size
2 x (2.18 x 1.58)
Gate pad size
1.06 x 0.65
Area total / active
42.8 / 33.5
mm
2
Thickness
180
μm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
334 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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