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參數(shù)資料
| 型號： | SIGC42T120CS |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | SIGC42T120CS |
SIGC42T120CS
Edited by INFINEON Technologies AI PS DD HV3, L 7151-S, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology
180μm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
SGW25N120
Applications:
drives, SMPS, resonant
applications
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-
A4048-A001
SIGC42T120CS
1200V
25A
6.59 x 6.49 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
6.59 x 6.49
Emitter pad size
2 x (2.18 x 1.58)
Gate pad size
1.06 x 0.65
Area total / active
42.8 / 33.5
mm
2
Thickness
180
μm
Wafer size
150
mm
Flat position
180
grd
Max.possible chips per wafer
334 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC42T120CS2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC42T170R2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC42T170R3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC42T170R3G | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC42T170R3G_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1700V Trench Field Stop technology low turn-off losses short tail current |
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