![](http://datasheet.mmic.net.cn/Silicon-Laboratories-Inc/SI5110-G-BC_datasheet_99681/SI5110-G-BC_6.png)
Si5110
6
Rev. 1.5
Figure 3. I/O Rise/Fall Times
Table 2. DC Characteristics
(VDD = 1.8 V ±5%, TA = –20 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Supply Current
IDD
Full Duplex
—
575
640
mA
Line/Diagnostic
Loopback
—
635
700
mA
Power Dissipation
PD
Full Duplex
—
1.0
1.2
W
Line/Diagnostic
Loopback
—1.1
1.3
W
Voltage Reference (VREF)
VREF
VREF driving 10 k
load
1.21
1.25
1.29
V
Common Mode Input Voltage
(RXDIN)
VICM
0.4
0.5
0.6
V
Differential Input Voltage Swing
(RXDIN)
(at bit error rate of 10–12)
VID
30
—
2000*
mVPPD
Common Mode Output Voltage
(TXDOUT, TXCLKOUT)
VOCM
0.7
0.9
1.1
V
Differential Output Voltage Swing
(TXDOUT, TXCLKOUT), Differen-
tial pk-pk
VOD
1000
1200
1400
mVPPD
LVPECL Input Common Mode
Voltage (REFCLK)
VICM
0.8
1.2
2.4
V
LVPECL Input Voltage Swing,
Differential pk-pk (REFCLK)
VID
250
—
2400
mVPPD
LVPECL Input Limits
VLIMIT
0—
2.5
V
LVDS Input Voltage Level
(TXDIN, TXCLK4IN)
VI
0.8
1.2
2.4
V
LVDS Input Voltage, Differential
(TXDIN, TXCLK4IN)
VID
200
—
mVPPD
LVDS Output Voltage Level
(RXDOUT, RXCLK1, RXCLK2,
TXCLK4OUT)
VO
100
Load
Line-to-Line
0.925
—
1.475
V
*Note: Voltage on RXDIN+ or RXDIN– should not exceed 1000
mVPP (single-ended)
All
Differential
IOs
t
F
t
R
80%
20%