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參數(shù)資料
| 型號(hào)： | S71PL254 |
| 廠商： | Spansion Inc. |
| 英文描述： | STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
| 中文描述： | 堆疊式多芯片產(chǎn)品，閃存和RAM |
| 文件頁數(shù)： | 70/196頁 |
| 文件大小： | 5729K |
| 代理商： | S71PL254 |
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70
S29PL127J/S29PL064J/S29PL032J for MCP
S29PL127J_064J_032J_MCP_00_A3 August 12, 2004
A d v a n c e I n f o r m a t i o n
5 illustrates the algorithm for the erase operation. Refer to the Erase/Program
Operations tables in the AC Characteristics section for parameters, and
Figure 16
section for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is
initiated by writing two unlock cycles, followed by a set-up command. Two addi-
tional unlock cycles are written, and are then followed by the address of the
sector to be erased, and the sector erase command. Table
17
shows the address
and data requirements for the sector erase command sequence.
The device does
not
require the system to preprogram prior to erase. The Em-
bedded Erase algorithm automatically programs and verifies the entire memory
for an all zero data pattern prior to electrical erase. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 μs occurs.
During the time-out period, additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 50 μs, otherwise erasure
may begin. Any sector erase address and command following the exceeded time-
out may or may not be accepted. It is recommended that processor interrupts be
disabled during this time to ensure all commands are accepted. The interrupts
can be re-enabled after the last Sector Erase command is written.
Any com-
mand other than Sector Erase or Erase Suspend during the time-out
period resets that bank to the read mode.
The system must rewrite the com-
mand sequence and any additional addresses and commands.
Note that Secured
Silicon Sector, autoselect, and CFI functions are unavailable when a [program/
erase] operation is in progress.
The system can monitor DQ3 to determine if the sector erase timer has timed out
(See the section on DQ3: Sector Erase Timer). The time-out begins from the ris-
ing edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading
array data and addresses are no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read data from the non-erasing
bank. The system can determine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to the Write Operation Sta-
tus section for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is
valid. All other commands are ignored. However, note that a
hardware reset
im-
mediately
terminates the erase operation. If that occurs, the sector erase
command sequence should be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
5 illustrates the algorithm for the erase operation. Refer to the Erase/Program
Operations tables in the AC Characteristics section for parameters, and
Figure 16
section for timing diagrams.
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相關(guān)代理商/技術(shù)參數(shù) |
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| S71PL254J | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
| S71PL254J04BAW0Z0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs |
| S71PL254J04BAW0Z2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs |
| S71PL254J04BAW0Z3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs |
| S71PL254J04BAW9Z0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs |
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