參數(shù)資料
型號: S29PL256N65GFWW00
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述: 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
封裝: 8 X 11.60 MM, LEAD FREE, FBGA-84
文件頁數(shù): 4/74頁
文件大?。?/td> 1968K
代理商: S29PL256N65GFWW00
4
S29PL-N MirrorBit
Flash Family
S29PL-N_00_A5 June 6, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Performance Characteristics
Note
Typical program and erase times assume the following conditions: 25°C, 3.0V V
CC
, 10,000 cycles; checkerboard data pattern.
Read Access Times (@ 30 pF, Industrial Temp.)
Random Access Time, ns (t
ACC
)
65
70
Page Access Time, ns (t
PACC
)
25
30
Max CE# Access Time, ns (t
CE
)
65
70
Max OE# Access Time, ns (t
OE
)
25
30
Current Consumption (typical values)
8-Word Page Read
6 mA
Simultaneous Read/Write
65 mA
Program/Erase
25 mA
Standby
20 μA
Typical Program & Erase Times (typical values)
(See Note)
Typical Word
40 μs
Typical Effective Word (32 words in buffer)
9.4 μs
Accelerated Write Buffer Program
6 μs
Typical Sector Erase Time (32-Kword Sector)
300 ms
Typical Sector Erase Time (128-Kword Sector)
1.6 s
Package Options
S29PL-N
VBH064 8.0 x 11.6 mm, 64-ball
VBH084 8.0 x 11.6 mm, 84-ball
256
z
129
z
127
z
相關(guān)PDF資料
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