參數(shù)資料
型號(hào): S29PL256N65GFWW00
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述: 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
封裝: 8 X 11.60 MM, LEAD FREE, FBGA-84
文件頁數(shù): 31/74頁
文件大?。?/td> 1968K
代理商: S29PL256N65GFWW00
June 6, 2007 S29PL-N_00_A5
S29PL-N MirrorBit
Flash Family
31
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 7.3
Sector Erase Operation
Notes
1. See
Table 12.1 on page 66
for erase command sequence.
2. See the section on DQ3 for information on the sector erase timeout.
No
Write
S
ector Er
as
e Cycle
s
:
Addre
ss
555h, D
a
t
a
8
0h
Addre
ss
555h, D
a
t
a
AAh
Addre
ss
2AAh, D
a
t
a
55h
S
ector Addre
ss
, D
a
t
a
3
0h
Write Addition
a
l
S
ector Addre
ss
e
s
FAIL. Write re
s
et comm
a
nd
to ret
u
rn to re
a
ding
a
rr
a
y.
PA
SS
. Device ret
u
rn
s
to re
a
ding
a
rr
a
y.
W
a
it 4
μ
s
Perform Write Oper
a
tion
S
t
a
t
us
Algorithm
S
elect
Addition
a
l
S
ector
s
Ye
s
Ye
s
Ye
s
Ye
s
Ye
s
No
No
No
No
L
as
t
S
ector
S
elected
Done
DQ5 = 1
Comm
a
nd Cycle 1
Comm
a
nd Cycle 2
Comm
a
nd Cycle
3
S
pecify fir
s
t
s
ector for er
asu
re
Error condition (Exceeded Timing Limit
s
)
S
t
a
t
us
m
a
y
b
e o
b
t
a
ined
b
y re
a
ding DQ7, DQ6
a
nd/or DQ2.
Poll DQ
3
.
DQ
3
= 1
E
a
ch
a
ddition
a
l cycle m
us
t
b
e written within t
S
EA
timeo
u
t
Timeo
u
t re
s
et
s
a
fter e
a
ch
a
ddition
a
l cycle i
s
written
The ho
s
t
s
y
s
tem m
a
y monitor DQ
3
or w
a
it t
S
EA
to en
su
re
a
ccept
a
nce of er
as
e comm
a
nd
s
No limit on n
u
m
b
er of
s
ector
s
Comm
a
nd
s
other th
a
n Er
as
e
Sus
pend or
s
electing
a
ddition
a
l
s
ector
s
for er
asu
re d
u
ring timeo
u
t re
s
et device to re
a
ding
a
rr
a
y
d
a
t
a
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