參數(shù)資料
型號(hào)： S29PL127N70GFW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 32K; RAM: 1K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
中文描述： 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
封裝： 8 X 11.60 MM, LEAD FREE, FBGA-64
文件頁(yè)數(shù)： 25/74頁(yè)
文件大?。?/td> 1968K
代理商： S29PL127N70GFW003
June 6, 2007 S29PL-N_00_A5
S29PL-N MirrorBit
Flash Family
25
D a t a
S h e e t
( P r e l i m i n a r y )
7.4
Program/Erase Operations
These devices are capable of single word or write buffer programming operations which are described in the
following sections. The write buffer programming is recommended over single word programming as it has
clear benefits from greater programming efficiency. See
Table 7.1 on page 20
for the correct device settings
required before initiation of a write command sequence.
Note the following details regarding the program/erase operations:
When the Embedded Program algorithm is complete, the device then returns to the read mode.
The system can determine the status of the program operation by using DQ7 or DQ6. See
Status
on page 37
for information on these status bits.
A
0
cannot be programmed back to a
1
. Attempting to do so causes the device to set DQ5 = 1 (halting any
further operation and requiring a reset command). A succeeding read shows that the data is still
0
.
Only erase operations can convert a
0
to a
1
.
A hardware reset immediately terminates the program operation and the program command sequence
should be reinitiated once the device has returned to the read mode, to ensure data integrity.
Any commands written to the device during the Embedded Program Algorithm are ignored except the
Program Suspend command.
Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in
progress.
Programming is allowed in any sequence and across sector boundaries for single word programming
operation.
7.4.1
Single Word Programming
In single word programming mode, four Flash command write cycles are used to program an individual Flash
address. While this method is supported by all Spansion devices, in general it is not recommended for
devices that support Write Buffer Programming. See
Table 12.1 on page 66
for the required bus cycles and
Figure 7.1 on page 26
for the flowchart.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. See
Write Operation Status
on page 37
for information on these status bits.
Single word programming is supported for backward compatibility with existing Flash driver software and use
of write buffer programming is strongly recommended for general programming. The effective word
programming time using write buffer programming is approximately four times faster than the single word
programming time.
相關(guān)PDF資料
PDF描述
S29PL127N70GFWW00 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 48K; RAM: 1.5K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL127N70GFWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70GFWW03 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 32K; RAM: 2K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL129N 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65GAW000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL127N70GFWW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70GFWW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70GFWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N80FAI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N80FAI002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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