參數(shù)資料
型號(hào): S29PL127N70GFW002
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述: 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
封裝: 8 X 11.60 MM, LEAD FREE, FBGA-64
文件頁數(shù): 59/74頁
文件大?。?/td> 1968K
代理商: S29PL127N70GFW002
June 6, 2007 S29PL-N_00_A5
S29PL-N MirrorBit
Flash Family
59
D a t a
S h e e t
( P r e l i m i n a r y )
11.8
AC Characteristics
11.8.1
Read Operations
Notes
1. Not 100% tested.
2. See
Figure 11.3 on page 55
and
Table 11.1 on page 55
for test specifications
3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of V
CC
/2. The time from OE# high to the data bus
driven to V
CC
/2 is taken as t
DF
.
4. For 70pf Output Load Capacitance, 2 ns is added to the above t
ACC
,t
CE
,t
PACC
,t
OE
values for all speed grades
5. CE1# and CE2# for the PL129N.
11.8.2
Read Operation Timing Diagrams
Figure 11.6
Read Operation Timings
Parameter
Description
(Notes)
Test Setup
Speed Options
Unit
JEDEC
Std.
65
70
80
t
AVAV
t
RC
Read Cycle Time (
1
)
Min
65
70
80
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
65
70
80
ns
t
ELQV
t
CE
Chip Enable to Output Delay (
5
)
OE# = V
IL
Max
65
70
80
ns
t
PACC
Page Access Time
Max
25
30
30
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
25
30
30
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (
3
)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (
1
,
3
)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First (
3
)
Min
5
ns
t
OEH
Output Enable Hold Time (
1
)
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
t
OH
t
CE
Data
WE#
Addresses
CE#
OE#
HIGH Z
Valid Data
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
相關(guān)PDF資料
PDF描述
S29PL127N70GFW003 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 32K; RAM: 1K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL127N70GFWW00 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 48K; RAM: 1.5K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL127N70GFWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70GFWW03 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 32K; RAM: 2K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL129N 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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S29PL127N70GFWW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70GFWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N80FAI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory