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參數(shù)資料
| 型號： | S29PL127N70GFW002 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 中文描述： | 8M X 16 FLASH 3V PROM, 70 ns, PBGA64 |
| 封裝： | 8 X 11.60 MM, LEAD FREE, FBGA-64 |
| 文件頁數(shù)： | 28/74頁 |
| 文件大?。?/td> | 1968K |
| 代理商： | S29PL127N70GFW002 |
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28
S29PL-N MirrorBit
Flash Family
S29PL-N_00_A5 June 6, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Software Functions and Sample Code
Notes
1. Base = Base Address.
2. Last = Last cycle of write buffer program operation; depending on number of words written, the total number of cycles can be from 6 to 37.
3. For maximum efficiency, it is recommended that the write buffer be loaded with the highest number of words (N words) possible.
The following is a C source code example of using the write buffer program function. See the
Spansion Low
Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: Write Buffer Programming Command */
/* NOTES: Write buffer programming limited to 16 words. */
/* All addresses to be written to the flash in */
/* one operation must be within the same flash */
/* page. A flash page begins at addresses */
/* evenly divisible by 0x20. */
UINT16 *src = source_of_data; /* address of source data */
UINT16 *dst = destination_of_data; /* flash destination address */
UINT16 wc = words_to_program -1; /* word count (minus 1) */
*((UINT16 *)base_addr + 0x555) = 0x00AA; /* write unlock cycle 1 */
*((UINT16 *)base_addr + 0x2AA) = 0x0055; /* write unlock cycle 2 */
*((UINT16 *)sector_address) = 0x0025; /* write write buffer load command */
*((UINT16 *)sector_address) = wc; /* write word count (minus 1) */
loop:
*dst = *src; /* ALL dst MUST BE SAME PAGE */ /* write source data to destination */
dst++; /* increment destination pointer */
src++; /* increment source pointer */
if (wc == 0) goto confirm /* done when word count equals zero */
wc--; /* decrement word count */
goto loop; /* do it again */
confirm:
*((UINT16 *)sector_address) = 0x0029; /* write confirm command */
/* poll for completion */
/* Example: Write Buffer Abort Reset */
*((UINT16 *)addr + 0x555) = 0x00AA; /* write unlock cycle 1 */
*((UINT16 *)addr + 0x2AA) = 0x0055; /* write unlock cycle 2 */
*((UINT16 *)addr + 0x555) = 0x00F0; /* write buffer abort reset */
Table 7.8
Write Buffer Program
(LLD Functions Used = lld_WriteToBufferCmd, lld_ProgramBufferToFlashCmd)
Cycle
Description
Operation
Word Address
Data
1
Unlock
Write
Base + 555h
00AAh
2
Unlock
Write
Base + 2AAh
0055h
3
Write Buffer Load Command
Write
Program Address
0025h
4
Write Word Count
Write
Program Address
Word Count (N–1)h
Number of words (N) loaded into the write buffer can be from 1 to 32 words.
5 to 36
Load Buffer Word N
Write
Program Address, Word N
Word N
Last
Write Buffer to Flash
Write
Sector Address
0029h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL127N70GFW003 | 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 32K; RAM: 1K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A) |
| S29PL127N70GFWW00 | 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 48K; RAM: 1.5K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A) |
| S29PL127N70GFWW02 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL127N70GFWW03 | 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 32K; RAM: 2K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A) |
| S29PL129N | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL127N70GFW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL127N70GFWW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL127N70GFWW02 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL127N70GFWW03 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL127N80FAI000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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