參數(shù)資料
型號(hào)： S29PL127N65GFWW03
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
封裝： 8 X 11.60 MM, LEAD FREE, FBGA-84
文件頁數(shù)： 44/74頁
文件大?。?/td> 1968K
代理商： S29PL127N65GFWW03
44
S29PL-N MirrorBit
Flash Family
S29PL-N_00_A5 June 6, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
8.
Advanced Sector Protection/Unprotection
The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations
in any or all sectors and can be implemented through software and/or hardware methods, which are
independent of each other. This section describes the various methods of protecting data stored in the
memory array. An overview of these methods in shown in
Figure 8.1 on page 44
.
Figure 8.1
Advanced Sector Protection/Unprotection
Hardw are Methods
Softw are Methods
WP# = V
IL
(All boot
sectors locked)
Password Method
(DQ2)
Persistent Method
(DQ1)
Lock Register
(One Time Programmable)
PPB Lock Bit
(
Notes 1, 2, 3
)
64-bit Passw ord
(One Time Protect)
1 = PPBs Unlocked
0 = PPBs Locked
Memory Array
Sector 0
Sector 1
Sector 2
Sector N-2
Sector N-1
Sector N
(Note 4)
PPB 0
PPB 1
PPB 2
PPB N-2
PPB N-1
PPB N
Persistent
Protection Bit ( PPD)
(
Notes 5, 6
)
DYB 0
DYB 1
DYB 2
DYB N-2
DYB N-1
DYB N
Dynamic
Protection Bit ( DYB)
( Notes 7, 8, 9)
Notes:
1. Bit is volatile, and defaults to 1 on reset.
2. Programming to 0 locks all PPBs to their current state.
3. Once programmed to 0, requires hardware reset to unlock.
4. N = Highest Address Sector.
5. 0 = Sector Protected,
1 = Sector Unprotected.
6. PPBs programmed individually, but cleared collectively.
7. 0 = Sector Protected,
1 = Sector Unprotected.
8. Protect effective only if PPB Lock Bit is unlocked and
corresponding PPB is 1 (unprotected).
9. Volatile Bits: defaults to user choice upon power-up
(see ordering options).
相關(guān)PDF資料
PDF描述
S29PL127N70GFW000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70GFW002 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70GFW003 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 32K; RAM: 1K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL127N70GFWW00 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 48K; RAM: 1.5K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL127N70GFWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL127N70FAI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70FAI002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70FAI003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70FAIW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N70FAIW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*