參數(shù)資料
型號: S29GL128M90TFIR82
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù): 27/160頁
文件大?。?/td> 2142K
代理商: S29GL128M90TFIR82
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
27
P r e l i m i n a r y
Ordering Information-S29GL256M
S29GL256M Standard Products
Standard products are available in several packages and operating ranges. The
order number (Valid Combination) is formed by a combination of the following:
The TSOP package marking appears as the first 16 characters of the OPN. For example,
the package marking for OPN S29GL256M10TAIR10 is “S29GL256M10TAIR1.”
The BGA package marking appears as characters 4-16 of the OPN. For example, the pack-
age marking for OPN S29GL256M10FAIR10 is “GL256M10FAIR1.”
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device.
Consult your local sales office to confirm availability of specific valid combinations and to
check on newly released combinations.
S29GL256M
10
T
A
I
R1
2
PACKAGE TYPE
0
= Tray
2
= 7” Tape and Reel
3
= 13” Tape and Reel
ADDITIONAL ORDERING OPTIONS
R1
= x8/x16, V
CC
=3.0-3.6V, Uniform sector device, highest address
sector protected when WP#/ACC=V
IL
R2
= x8/x16, V
CC
=3.0-3.6V, Uniform sector device, lowest address sector
protected when WP#/ACC=V
IL
TEMPERATURE RANGE
I
= Industrial (–40
°
C to +85
°
C)
PACKAGE MATERIAL SET
A
= Standard
F
= Pb-Free
PACKAGE TYPE
T
= Thin Small Outline Package (TSOP) Standard Pinout
F
= Fortified Ball-Grid Array Package
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
S29GL1256M
256 Megabit Page-Mode Flash Memory Manufactured using 0.23 um MirrorBit
TM
Process Technology, 3.0 Volt-only Read, Program, and Erase
Valid Combinations for
TSOP Package
Package
Notes
S29GL256M10
S29GL256M11
TAI
TFI
R1
R2
TS056
Valid Combinations for
BGA Package
Package
Notes
S29GL0256M10
S29GL0256M11
FAI
FFI
R1
R2
LAC064
相關(guān)PDF資料
PDF描述
S29GL256M10FAIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR03 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR13 MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
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