參數(shù)資料
型號: S29GL128M90TFIR82
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù): 25/160頁
文件大?。?/td> 2142K
代理商: S29GL128M90TFIR82
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
25
P r e l i m i n a r y
The TSOP package marking appears as the first 16 characters of the OPN. For example,
the package marking for OPN S29GL064M90TAIR10 is “S29GL064M90TAIR1.”
The BGA package marking appears as characters 4-16 of the OPN. For example, the pack-
age marking for OPN S29GL064M90BAIR00 is “GL064M90BAIR0.”
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this
device. Consult your local sales office to confirm availability of specific valid com-
binations and to check on newly released combinations.
Note:
1. This package is recommended for new designs using TSOPs.
Valid Combinations for
TSOP Package
Package
Notes
S29GL064M90
S29GL064M10
S29GL064M11
TAI
TFI
R0
R3
R4
R6
R7
TS048
(1)
TAI
TFI
R1
R2
TS056
(1)
TBI
TCI
R2
R7
FPT-48P-M19
TAI
TDI
R9
FPT-56P-M01
Valid Combinations for
BGA Package
Package
Notes
S29GL064M90
S29GL064M10
S29GL064M11
BAI
BFI
R0
R3
R4
R5
FBE063
FAI
FFI
R1
R2
R3
R4
R5
LAA064
相關(guān)PDF資料
PDF描述
S29GL256M10FAIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR03 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR13 MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
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