參數(shù)資料
型號: S29GL128M90TFIR12
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝: LEAD FREE, MO-142-EC, TSOP-56
文件頁數(shù): 106/160頁
文件大?。?/td> 2142K
代理商: S29GL128M90TFIR12
106
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC
pin depending on the particular product. When the system asserts V
HH
on the
WP#/ACC or ACC pin. The device uses the higher voltage on the WP#/ACC or ACC
pin to accelerate the operation.
Note that the
WP#/
ACC pin must not be at V
HH
for operations other than accelerated programming, or device damage may re-
sult. WP# has an internal pullup; when unconnected, WP# is at V
IH
.
Figure 3 illustrates the algorithm for the program operation. Refer to the Erase
and Program Operations–“AC Characteristics” section on page 124 section for pa-
rameters, and Figure 14 for timing diagrams.
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S29GL128M90TFIR23 MOSFET, Switching; VDSS (V): 100; ID (A): 4; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.12; RDS (ON) typ. (ohm) @4V[4.5V]: 0.15; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 420; toff (µs) typ: 0.11; Package: SOP-8
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