參數(shù)資料
型號: S29GL128M90TAIR83
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù): 159/160頁
文件大?。?/td> 2142K
代理商: S29GL128M90TAIR83
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
159
P r e l i m i n a r y
Updated the 48-pin standard TSOP diagram.
Removed the 48-pin reverse TSOP diagram.
Removed the 56-pin reverse TSOP diagram.
Ordering Information
Removed all references to package type R.
Table
14
Autoselect Codes, (High Voltage Method)
Updated the R3, R4 column replacing -04 and -03 designators with -R4 and -R3
respectively.
Word Program Command Sequence
Included statements documenting word programming support for backward com-
patibility with existing Flash drivers.
Physical Dimensions
Removed the BGA-80P-M02 diagram.
Revision A+3 (February 26, 2004)
Distinctive Characteristics
Corrected typo in the Flexible
Se
ctor Architecture section.
Revision A+4 (March 24, 2004)
CMOS Compatible
Removed V
CC
from Max for V
OL
.
Erase and Program Operations-S29GL256M only
Corrected unit typos.
Erase and Program Operations-S29GL128M only
Corrected the minimum Data Setup Time.
Alternate CE# Controlled Erase and Program Operations-S29GL128M
Corrected the minimum CE# Pulse width.
TSOP Pin and BGA Package Capacitance: Pkg types TB, TC, BB, BC
Added C
IN3.
Connection Diagrams
40-pin standard TSOP: Corrected pin 30 to be V
IO
.
48-pin standard TSOP: Added superscripts to designators for pin 9, 13, 14, 15
and 47. Changed pin 13 to A21. Added two notes below illustration.
56-pin standard TSOP: Added superscripts to designators for pin 1, 2 and 12.
Changed pin 56 to NC. Added three notes below illustration.
64-ball Fortified BGA: Corrected ball D8 to be V
IO
. Added superscripts to desig-
nators for ball D8, F7, and F1. Added two notes below illustration.
63-ball Fine-pitch BGA: Added superscript to designator for Ball H7. Added one
note below illustration. Added connection diagrams for S29GL064M (model R0)
and S29GL032M (model R0).
Pin Description
Added V
IO
description.
相關(guān)PDF資料
PDF描述
S29GL128M90TDIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TDIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TDIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TDIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TDIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128M90TFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N10TF101 制造商:Spansion 功能描述:
S29GL128N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:128Mb (16M x 8,8M x 16) 寫周期時間 - 字,頁:100ns 訪問時間:100ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C(TA) 安裝類型:表面貼裝 封裝/外殼:56-TFSOP(0.724",18.40mm 寬) 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91