參數(shù)資料
型號: S29GL128M90FDIR13
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù): 94/160頁
文件大?。?/td> 2142K
代理商: S29GL128M90FDIR13
94
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Temporary Sector Group Unprotect
This feature allows temporary unprotection of previously protected sector groups
to change data in-system. The Sector Group Unprotect mode is activated by set-
ting the RESET# pin to
V
ID
. During this mode, formerly protected sector groups
can be programmed or erased by selecting the sector group addresses. Once V
ID
is removed from the RESET# pin, all the previously protected sector groups are
protected again. Figure 1 shows the algorithm, and Figure 23 shows the timing
diagrams, for this feature.
Notes:
1. All protected sector groups unprotected (If WP# = V
IL
, the first or last sector will remain protected).
2. All previously protected sector groups are protected once again.
Figure 1. Temporary Sector Group Unprotect Operation
START
Perform Erase or
Program Operations
RESET# = V
IH
Temporary Sector
Group Unprotect Completed
(Note 2)
RESET# = V
ID
(Note 1)
相關(guān)PDF資料
PDF描述
S29GL128M90FDIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FDIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FDIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FDIR80 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FDIR82 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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