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參數(shù)資料
| 型號(hào)： | S29GL064M90TDIR13 |
| 廠商： | Spansion Inc. |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| 中文描述： | 3.0伏只頁(yè)面模式閃存具有0.23微米工藝技術(shù)的MirrorBit |
| 文件頁(yè)數(shù)： | 120/160頁(yè) |
| 文件大?。?/td> | 2142K |
| 代理商： | S29GL064M90TDIR13 |
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120
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
apply to the chip erase command.) If additional sectors are selected for erasure,
the entire time-out also applies after each additional sector erase command.
When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the
time between additional sector erase commands from the system can be as-
sumed to be less than 50 μs, the system need not monitor DQ3. See also the
Sector Erase Command Sequence section.
After the sector erase command is written, the system should read the status of
DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase
algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the device will accept addi-
tional sector erase commands. To ensure the command has been accepted, the
system software should check the status of DQ3 prior to and following each sub-
sequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
Table
33
shows the status of DQ3 relative to the other status bits.
DQ1: Write-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these
conditions DQ1 produces a “1”. The system must issue the Write-to-Buffer-Abort-
Reset command sequence to return the device to reading array data. See Write
Buffer section for more details.
Table 33. Write Operation Status
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the
maximum timing limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for
further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to ‘1’ when the device has aborted the write-to-buffer operation
Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
DQ1
RY/
BY#
Standard
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
N/A
0
Program
Suspend
Mode
Program-
Suspend
Read
Program-Suspended
Sector
Invalid (not allowed)
1
Non-Program
Suspended Sector
Data
1
Erase
Suspend
Mode
Erase-
Suspend
Read
Erase-Suspended
Sector
1
No toggle
0
N/A
Toggle
N/A
1
Non-Erase
Suspended Sector
Data
1
Erase-Suspend-Program
(Embedded Program)
DQ7#
Toggle
0
N/A
N/A
N/A
0
Write-to-
Buffer
Busy (Note 3)
DQ7#
Toggle
0
N/A
N/A
0
0
Abort (Note 4)
DQ7#
Toggle
0
N/A
N/A
1
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90TFIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray |
| S29GL064M90TFIR30 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR4 | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29GL064M90TFIR40 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29GL064M90TFIR60 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
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