參數(shù)資料
型號: S29GL064M90TBIR22
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: TSOP-48
文件頁數(shù): 127/160頁
文件大?。?/td> 2142K
代理商: S29GL064M90TBIR22
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
127
P r e l i m i n a r y
AC Characteristics
Hardware Reset (RESET#)
Notes:
1. Not 100% tested.
Figure 15. Reset Timings
Parameter
Description
All Speed Options
Unit
JEDEC
Std.
t
Ready
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
μ
s
t
Ready
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
t
RP
RESET# Pulse Width
Min
500
ns
t
RH
Reset High Time Before Read (See Note)
Min
50
ns
t
RPD
RESET# Input Low to Standby Mode (See Note)
Min
20
μs
t
RB
RY/BY# Output High to CE#, OE# pin Low
Min
0
ns
RESET#
RY/BY#
RY/BY#
t
RP
t
Ready
Reset Timings NOT during Embedded Algorithms
t
Ready
CE#, OE#
t
RH
CE#, OE#
Reset Timings during Embedded Algorithms
RESET#
t
RP
t
RB
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S29GL064M90TBIR30 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TBIR32 MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
S29GL064M90TBIR33 MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
S29GL064M90TFIR02 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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