參數(shù)資料
型號： S29GL064M90FAIR23
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MOSFET, Switching; VDSS (V): 250; ID (A): 65; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.029; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝： 13 X 11 MM, FORTIFIED, BGA-64
文件頁數(shù)： 159/160頁
文件大?。?/td> 2142K
代理商： S29GL064M90FAIR23
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
159
P r e l i m i n a r y
Updated the 48-pin standard TSOP diagram.
Removed the 48-pin reverse TSOP diagram.
Removed the 56-pin reverse TSOP diagram.
Ordering Information
Removed all references to package type R.
Table
14
Autoselect Codes, (High Voltage Method)
Updated the R3, R4 column replacing -04 and -03 designators with -R4 and -R3
respectively.
Word Program Command Sequence
Included statements documenting word programming support for backward com-
patibility with existing Flash drivers.
Physical Dimensions
Removed the BGA-80P-M02 diagram.
Revision A+3 (February 26, 2004)
Distinctive Characteristics
Corrected typo in the Flexible
Se
ctor Architecture section.
Revision A+4 (March 24, 2004)
CMOS Compatible
Removed V
CC
from Max for V
OL
.
Erase and Program Operations-S29GL256M only
Corrected unit typos.
Erase and Program Operations-S29GL128M only
Corrected the minimum Data Setup Time.
Alternate CE# Controlled Erase and Program Operations-S29GL128M
Corrected the minimum CE# Pulse width.
TSOP Pin and BGA Package Capacitance: Pkg types TB, TC, BB, BC
Added C
IN3.
Connection Diagrams
40-pin standard TSOP: Corrected pin 30 to be V
IO
.
48-pin standard TSOP: Added superscripts to designators for pin 9, 13, 14, 15
and 47. Changed pin 13 to A21. Added two notes below illustration.
56-pin standard TSOP: Added superscripts to designators for pin 1, 2 and 12.
Changed pin 56 to NC. Added three notes below illustration.
64-ball Fortified BGA: Corrected ball D8 to be V
IO
. Added superscripts to desig-
nators for ball D8, F7, and F1. Added two notes below illustration.
63-ball Fine-pitch BGA: Added superscript to designator for Ball H7. Added one
note below illustration. Added connection diagrams for S29GL064M (model R0)
and S29GL032M (model R0).
Pin Description
Added V
IO
description.
相關(guān)PDF資料
PDF描述
S29GL064M90FAIR30 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FAIR32 MOSFET, Switching; VDSS (V): 250; ID (A): 12; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.13; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1300; toff (µs) typ: 0.08; Package: TO-220FN
S29GL064M90FAIR33 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR00 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR02 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064M90FAIR40 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 64-Pin Fortified BGA Tray
S29GL064M90FFIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR00 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray
S29GL064M90TAIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
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