參數(shù)資料
型號: S29GL064M90FAIR13
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝: 13 X 11 MM, FORTIFIED, BGA-64
文件頁數(shù): 142/160頁
文件大?。?/td> 2142K
代理商: S29GL064M90FAIR13
142
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
AC Characteristics
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Illustration shows device in word mode.
Figure 24. Alternate CE# Controlled Write (Erase/Program)
Operation Timings
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
PBD for program
55 for erase
t
RH
t
WHWH1 or 2
t
POLL
RY/BY#
t
WH
29 for program buffer to flash
30 for sector erase
10 for chip erase
PBA for program
2AA for erase
SA for program buffer to flash
SA for sector erase
555 for chip erase
t
BUSY
相關(guān)PDF資料
PDF描述
S29GL064M90FAIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FAIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FAIR23 MOSFET, Switching; VDSS (V): 250; ID (A): 65; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.029; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
S29GL064M90FAIR30 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FAIR32 MOSFET, Switching; VDSS (V): 250; ID (A): 12; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.13; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1300; toff (µs) typ: 0.08; Package: TO-220FN
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