參數(shù)資料
型號: S29GL064M90BCIR10
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術的MirrorBit
文件頁數(shù): 144/160頁
文件大小: 2142K
代理商: S29GL064M90BCIR10
144
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
TSOP Pin and BGA Package Capacitance
For package types TA, TF, BA, BF, FA, FF (refer to Ordering Information Pages):
For package types TB, TC, BB, BC, (refer to Ordering Information Pages):
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
8
10
pF
BGA
8
10
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
8
10
pF
BGA
8
10
pF
C
IN3
RESET# and WP#/ACC Pin
Capacitance
V
IN
= 0
TSOP
20
25
pF
BGA
15
20
pF
相關PDF資料
PDF描述
S29GL064M90BCIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR13 MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
S29GL064M90BCIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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