參數(shù)資料
型號: S29GL032M10FBCR50
廠商: Spansion Inc.
英文描述: MirrorBit Flash Family
中文描述: MirrorBit閃存系列
文件頁數(shù): 116/159頁
文件大?。?/td> 2217K
代理商: S29GL032M10FBCR50
116
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
D a t a s h e e t
Figure 7. Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress
or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence.
Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor
to V
CC
.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in the erase-
suspend-read mode.
Table 37 on page 120
shows the outputs for RY/BY#.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ15–DQ0
Addr = VA
Read DQ15–DQ0
Addr = VA
DQ7 = Data
START
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
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S29GL064N11FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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