參數(shù)資料
型號(hào): S29GL032M10BFIR50
廠商: SPANSION LLC
元件分類: DRAM
英文描述: MirrorBit Flash Family
中文描述: 2M X 16 FLASH 3V PROM, 100 ns, PBGA48
封裝: 8 X 6 MM, LEAD FREE, BGA-48
文件頁數(shù): 112/159頁
文件大?。?/td> 2217K
代理商: S29GL032M10BFIR50
112
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
D a t a s h e e t
To resume the sector erase operation, the system must write the Erase Resume command. Further writes of the
Resume command are ignored. Another Erase Suspend command can be written after the chip resumes erasing.
Notes:
During an erase operation, this flash device performs multiple internal operations which are invisible to the system. When an
erase operation is suspended, any of the internal operations that were not fully completed must be restarted. As such, if this flash
device is continually issued suspend/resume commands in rapid succession, erase progress are impeded as a function of the
number of suspends. The result is a longer cumulative erase time than without suspends. Note that the additional suspends do
not affect device reliability or future performance. In most systems rapid erase/suspend activity occurs only briefly. In such cases,
erase performance is not significantly impacted.
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PDF描述
S29GL032M10FBCR50 MirrorBit Flash Family
S29GL064N11FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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