參數(shù)資料
型號： S29GL032A30FFIR10
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述： 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術(shù)
文件頁數(shù)： 61/95頁
文件大?。?/td> 2389K
代理商： S29GL032A30FFIR10
September 10, 2007 S29GL-A_00_A11
S29GL-A
61
D a t a
S h e e t
10.2
Command Definitions
Figure 10.2
Command Definitions (x16 Mode, BYTE# = V
IH
)
Command
Sequence
(Note 1)
C
Bus Cycles (Notes
2
–
5
)
First
Second
Third
Fourth
Fifth
Sixth
Read
(Note 5)
1
RA
RD
Reset
(Note 6)
1
XXX
F0
A
(
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
0001
Device ID
(Note 8)
6
555
AA
2AA
55
555
90
X01
227E
X0E
(Note 19)
X0F
(Note 19)
Device ID
(Note 9)
Secured Silicon
Sector Factory Protect
4
555
AA
2AA
55
555
90
X01
(Note 18)
4
555
AA
2AA
55
555
90
X03
(Note 10)
Sector Group Protect Verify
(Note 11)
4
555
AA
2AA
55
555
90
(SA)X02
00/01
Enter Secured Silicon Sector Region
3
555
AA
2AA
55
555
88
Exit Secured Silicon Sector Region
4
555
AA
2AA
55
555
90
XXX
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer
(Note 12)
3
555
AA
2AA
55
SA
25
SA
WC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset
(Note 13)
3
555
AA
2AA
55
555
F0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program
(Note 14)
2
XXX
A0
PA
PD
Unlock Bypass Reset
(Note 15)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend
(Note 16)
1
XXX
B0
Program/Erase Resume
(Note 17)
1
XXX
30
CFI Query
(Note 18)
1
55
98
Legend
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse,
whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE# or CE#
pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased.
Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer page as
PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes
1. See
Table 7.1 on page 22
for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are 555 or
2AA as shown in table, address bits above A11 and data bits above DQ7 are
don’t care.
5. No unlock or command cycles required when device is in read mode.
6. Reset command is required to return to read mode (or to erase-suspend-
read mode if previously in Erase Suspend) when device is in autoselect
mode, or if DQ5 goes high while device is providing status information.
7. Fourth cycle of the autoselect command sequence is a read cycle. Data bits
DQ15–DQ8 are don’t care. Except for RD, PD and WC. See
Autoselect
Command Sequence on page 53
for more information.
8. For S29GL064A and S29GL032A, Device ID must be read in three cycles.
9. For S29GL016A, Device ID must be read in one cycle.
10.Refer to
Table 7.12 on page 40
for data indicating Secured Silicon Sector
factory protect status.
11.Data is 00h for an unprotected sector group and 01h for a protected sector
group.
12.Total number of cycles in command sequence is determined by number of
words written to write buffer. Maximum number of cycles in command
sequence is 21, including
Program Buffer to Flash
command.
13.Command sequence resets device for next command after aborted write-to-
buffer operation.
14.Unlock Bypass command is required prior to Unlock Bypass Program
command.
15.Unlock Bypass Reset command is required to return to read mode when
device is in unlock bypass mode.
16.System may read and program in non-erasing sectors, or enter autoselect
mode, when in Erase Suspend mode. Erase Suspend command is valid only
during a sector erase operation.
17.Erase Resume command is valid only during Erase Suspend mode.
18.Command is valid when device is ready to read array data or when device is
in autoselect mode.
19.Refer to
Table 7.12 on page 40
, for individual Device IDs per device density
and model number.
相關(guān)PDF資料
PDF描述
S29GL032A30FFIR12 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR13 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR20 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR22 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032A30FFIR12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*