參數(shù)資料
型號： S29GL032A30FFIR10
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述： 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術(shù)
文件頁數(shù)： 3/95頁
文件大小： 2389K
代理商： S29GL032A30FFIR10
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient pro-
duction volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid com-
binations offered may occur.
Publication Number
S29GL-A_00
Revision
A
Amendment
11
Issue Date
September 10, 2007
The S29GL064A and S29GL032A will not be offered for new designs. For new and current designs, the S29GL064N and
S29GL032N supersedes the S29GL064A and S29GL032A respectively and are the factory-recommended migration path.
Please refer to the S29GL064N and S29GL032N for specifications and ordering information.
Distinctive Characteristics
Architectural Advantages
Single power supply operation
– 3-Volt read, erase, and program operations
Manufactured on 200 nm MirrorBit process technology
Secured Silicon
Sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
– May be programmed and locked at the factory or by the customer
Flexible sector architecture
– 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
– 64 Mb (boot sector models): 127 32 Kword (64 KB) sectors
+ 8 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): 64 32Kword (64 KB) sectors
– 32 Mb (boot sector models): 63 32Kword (64 KB) sectors
+ 8 4Kword (8KB) boot sectors
– 16 Mb (boot sector models): 31 31Kword (64 KB) sectors
+ 8 4Kword (8 KB) boot sectors
Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
100,000 erase cycles typical per sector
20-year data retention typical
Performance Characteristics
High performance
– 90 ns access time
– 4-word/8-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer which reduces overall programming
time for multiple-word updates
Low power consumption
(typical values at 3.0 V, 5 MHz)
– 18 mA typical active read current
– 50 mA typical erase/program current
– 1 μA typical standby mode current
Package options
– 48-pin TSOP
– 56-pin TSOP
– 64-ball Fortified BGA
– 48-ball fine-pitch BGA
– 56-ball fine pitch BGA
(MCP-compatible for cellular handsets)
Software & Hardware Features
Software features
– Program Suspend & Resume: read other sectors before
programming operation is completed
– Erase Suspend & Resume: read/program other sectors before an
erase operation is completed
– Data# polling & toggle bits provide status
– CFI (Common Flash Interface) compliant: allows host system to
identify and accommodate multiple flash devices
– Unlock Bypass Program command reduces overall multiple-word
programming time
Hardware features
– Sector Group Protection: hardware-level method of preventing write
operations within a sector group
– Temporary Sector Unprotect: V
ID
-level method of charging code in
locked sectors
– WP#/ACC input accelerates programming time (when high voltage
is applied) for greater throughput during system production. Protects
first or last sector regardless of sector protection settings on uniform
sector models
– Hardware reset input (RESET#) resets device
– Ready/Busy# output (RY/BY#) detects program or erase cycle
completion
S29GL-A MirrorBit
Flash Family
S29GL064A, S29GL032A, and S29GL016A
64 Megabit, 32 Megabit, and 16 Megabit
3.0-Volt only Page Mode Flash Memory
featuring 200 nm MirrorBit Process Technology
Data Sheet
相關(guān)PDF資料
PDF描述
S29GL032A30FFIR12 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR13 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR20 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR22 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032A30FFIR12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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