參數資料
型號: S-29355A
廠商: Seiko Instruments Inc.
英文描述: CMOS 4Kbit Serial EEPROM(4K位 CMOS 串行EEPROM)
中文描述: 4Kbit的CMOS串行EEPROM(4K的位的CMOS串行EEPROM的)
文件頁數: 7/40頁
文件大小: 166K
代理商: S-29355A
CMOS 2K/4K-bit SERIAL E
2
PROM
S-29255A/29355A
6
Seiko Instruments Inc.
2.1 Program (PROGRAM) mode
This mode writes 16-bit data to the specified address. After CS goes to “L”, input op code, address, and 16-bit data. The
write operation starts at the rising edge of the 32nd SK clock cycle from the start bit.
It is not necessary to make the data be “1” before the data write operation.
Figure 6
2.2 Write all (WRAL) mode: option
The same 16-bit data is written into all address areas in the memory. After CS changes from “H” to “L”, input the op code,
address, and 16-bit data. The write operation starts at the rising edge of the 32nd SK clock cycle from the start bit.
It is not necessary to make the data be “1” before the data write operation.
Figure 7
2.3 Erase all (ERAL) mode: option
Data in all address areas is erased. After erasing the data, all of the data is set to “1”. After CS changes from “H” to “L”,
input the op code and address. The erase operation starts at the rising edge of the 16th SK clock cycle from the start bit.
Figure 8
*
A7
0
0
0
17
16
15
14
13
12
Write operation starts
Hi-Z
t
PR
4
2
1
D0
D14
11
10
9
8
7
6
5
CS
D15
SK
DI
DO
A0
A6
A5
A4
A3
A2
A1
31
32
3
0
1
1
0
1
RDY/
BUSY
*
L
for the S-29255A
*
*
17
16
15
14
13
12
Write operation starts
Hi-Z
t
PR
4
2
1
D0
D14
11
10
9
8
7
6
5
CS
D15
SK
DI
DO
*
*
*
*
*
*
31
32
3
0
1
1
0
1
0
0
0
RDY/
BUSY
*
*
16
15
14
13
12
Erase operation Start
Hi-Z
t
PR
4
2
1
11
10
9
8
7
6
5
CS
SK
DI
DO
*
*
*
*
*
*
3
0
1
1
0
1
0
0
0
RDY/
BUSY
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參數描述
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