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參數(shù)資料
| 型號： | RX1214B130Y |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Microwave power transistor(NPN 微波功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-439A, 3 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 87K |
| 代理商： | RX1214B130Y |
1997 Feb 14
4
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
THERMAL CHARACTERISTICS
Notes
1.
2.
See “Mounting recommendations in the General part of handbook SC19a”
Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common-base test circuit as shown in Fig.3.
List of components
(see Fig.3)
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
R
th mb-h
Z
th j-h
thermal resistance from junction to mounting base T
j
= 120
°
C
thermal resistance from mounting base to heatsink note 1
thermal impedance from junction to heatsink
1.75
0.2
0.4
K/W
K/W
K/W
t
p
= 150
μ
s;
δ
= 5%;
notes 1 and 2
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
I
EBO
V
(BR)CES
collector cut-off current
emitter cut-off current
collector-emitter breakdown voltage
I
E
= 0; V
CB
= 50 V
I
C
= 0; V
EB
= 1.5 V
I
C
= 60 mA; V
BE
= 0
60
6
0.6
mA
mA
V
MODE OF
OPERATION
CONDITIONS
f
(GHz)
V
CC
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Class C
t
p
= 150
μ
s;
δ
= 5%
t
p
= 500
μ
s;
δ
= 10%
1.2 to 1.4
1.2 to 1.4
50
40
≥
130; typ. 140
typ. 80
≥
7; typ. 7.5
typ. 8.5
≥
35; typ. 39
typ. 40
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1
C1
C2
C3
C4
0.5 mm copper wire
trimmer capacitor
chip capacitor
tantalum capacitor
feedthrough bypass capacitor
total length = 15 mm
0.6
5 pF
Tekelec, ref AT3-7271SL
10
μ
F, 50 V
Erie, ref.1250-003
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| RX1214B150W | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Bipolar NPN UHF/Microwave Transisitor |
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| RX1214B300Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| RX1214B300Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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