
RPI-303
Photointerrupter, Taller type
Applications
Reel count sensor for VCR
DVD
Features
1) Tall package (Optical axis 20.75mm).
2) Small package due to the double-layer
mold.
3) PPS package for heat resistance.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
This product is not designed to be protected against electromagnetic wave.
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Through hole
Emitter
Collector
Anode
Cathode
Optical axis center
+0.1
0
R0.3
-0.2
+0
C0.3
2.7
0.2
4-
φ0.8
4.2
1
1.9
5.7
2.5
1.4
1.7
3.5
1.5
0.5
0.2
17.4
2.5
4.2
1.7
1.2
2.3
6.3
7.3
3.0
22
17.45
(20.75)
(4)
(5.7)
4-0.2
1.5
(2.5)
4-0.5
±0.1
11
3.6
2
(0.4)
Min.2.1
slope 10
slope 1
slope 5
Fig.1 Relative output vs. distance ( )
Fig.4 Relative output vs. distance (
)
Fig.4 Power dissipation / collector power
dissipation vs. ambient temperature
Fig.2 Forward current falloff
Fig.9 Dark current vs. ambient
temperature
Fig.10 Output characteristics
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
td
:
t r
:
t f
:
Fig.11 Response time measurement circuit
td
tr
tf
10%
90%
RL
VCC
Input
Output
Fig.7 Collector current vs. forward current
Fig.8 Response time vs.
collector current
Fig.3 Forward current vs. forward voltage
Fig.5 Relative output vs. ambient
temperature
Parameter
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
Rise time
Fall time
Symbol
VF
IR
ICEO
λP
IC
fC
VCE(sat)
tr
tf
Min.
0.2
Typ.
1.3
800
0.7
10
Max.
1.6
10
0.5
2.0
0.4
Unit
VIF
=50mA
IF
=50mA
VR
=5V
VCE
=10V
VCE
=5V, IF=20mA
IF
=20mA, IC=0.1mA
VCC
=5V, IC=1mA, RL=100
VCC
=5V, IF=20mA, RL=100
A
nm
mA
V
s
10
s
1
MHz
950
nm
Conditions
tr tf
Response time
Maximum sensitivity wavelength
λP
800
nm
10
s
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Photo
transistor
Infrared
light
emitter
diode
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
30 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Tsol
260 / 3
°C / s
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Soldering temperture
Input
(LED
)
Output
photo-
transistor
(
)
1.6mm from the body bottom.
RESPONSE
TIME
:
t
(
s)
COLLECTOR CURRENT : Ic (mA)
0.1
1
10
100
1
10
100
1000
VCC
=5V
Ta
=25°C
RL
=1k
RL
=500
RL
=100
DARK
CURRENT
:
I
D
(nA)
AMBIENT TEMPERATURE : Ta (
°C)
0
25
50
75
100
25
0.1
1
10
100
1000
VCE
=10V
VCE
=20V
VCE
=30V
COLLECTOR
CURRENT
:
Ic
(mA)
FORWARD CURRENT : IF (mA)
0
1020304050
0
0.4
0.8
1.2
1.6
2.0
VCE=5V
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE : VCE (
V)
0
0.5
1
1.5
2
2.5
2
04
6
10
8
40mA
30mA
20mA
10mA
IF=50mA
20
0
20
40
60
80
100
20
80
PD
PC
100
120
60
40
0
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0
0.5
1.0
1.5
2.0
3.0
2.5
100
75
50
25
0
d
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
AMBIENT TEMPERATURE : Ta (
°C)
25
0
25
50
75
100
50
0
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0
1.0
2.0
4.0
3.0
100
50
25
75
0
d
FORWARD
CURRENT
:
I
F
(mA)
AMBIENT TEMPERATURE : Ta (
°C)
20
0
20
40
60
80
100
10
50
40
30
20
0
FORWARD VOLTAGE : VF (
V)
FORWARD
CURRENT
:
I
F
(
mA
)
0
10
20
30
40
50
0.4
0
0.8
1.2
2.0
1.6
75
°C
50
°C
25
°C
0
°C
25
°C