參數(shù)資料
型號: RPI-352
元件分類: 開關(guān)
英文描述: 3 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
文件頁數(shù): 1/2頁
文件大?。?/td> 71K
代理商: RPI-352
RPI-352
Photointerrupter, Small type
Applications
Floppy disk drives
Printers
Facsimiles
VCR
Features
1) Positioning pin enables precision
mounting.
2) Gap between emitter and detector
is 3.0mm.
3) Compact
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Emitter
Collector
Anode
Cathode
Optical axis center
Gap
Cross-section A-A
A
2-C0.2
φ1
+0
-0.1
+0
-0.1
+0
-0.1
2-R1
φ1
φ1.4
4-
φ0.8
5
2.5
C0.7
0.4
(1.2)
0.8
4-0.5
(2.5)
6.4
±0.2
4.2
1.2
3
±0.2
3.9
5.4
1.3
0.3
Min.5
(1.5)
(5)
4-0.2
2.5
3.2
Through hole
Fig.1 Relative output current vs.
distance ( )
Fig.4 Relative output current vs.
distance ( )
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0
0.5
1.0
1.5
2.0
3.0
2.5
100
75
50
25
0
d
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0
0.5
1.0
1.5
2.0
3.0
2.5
100
75
50
25
0
d
Fig.2 Forward current falloff
FORWARD
CURRENT
:
I
F
(mA)
AMBIENT TEMPERATURE : Ta (
°C)
20
0
20
40
60
80
100
10
50
40
30
20
0
Fig.10 Output characteristics
COLLECTOR
CURRENT
:
Ic
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0
0.5
1
1.5
2
2.5
2
04
6
10
8
40mA
30mA
20mA
10mA
IF=50mA
Fig.11 Response time measurement circuit
td
:
t r
:
t f
:
Delay time
Rise time (time for output current to rise
from 10% to 90% of peak current)
Fall time (time for output current to fall
from 90% to 10% of peak current)
td
tr
tf
10%
90%
RL
VCC
Input
Output
Fig.8 Response time vs.
collector current
RESPONSE
TIME
:
t
(
s)
COLLECTOR CURRENT : Ic (mA)
0.1
1
10
100
1
10
100
1000
VCC
=5V
Ta
=25°C
RL
=1k
RL
=500
RL
=100
Fig.9 Dark current vs.
ambient temperature
DARK
CURRENTzI
D
(nA)
AMBIENT TEMPERATURE : Ta (
°C)
0
25
50
75
100
25
0.1
1
10
100
1000
VCE
=10V
VCE
=20V
VCE
=30V
Fig.6 Relative output vs. ambient
temperature
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
AMBIENT TEMPERATURE : Ta (
°C)
25
0
25
50
75
100
50
0
Fig.7 Collector current vs.
forward current
COLLECTOR
CURRENT
:
Ic
(mA)
FORWARD CURRENT : IF (mA)
0
1020304050
0
0.4
0.8
1.2
1.6
2.0
VCE=5V
FORWARD VOLTAGE : VF (
V)
FORWARD
CURRENT
:
I
F
(
mA
)
Fig.3 Forward current vs. forward
voltage
0
10
20
30
40
50
0.4
0
0.8
1.2
2.0
1.6
75
°C
50
°C
25
°C
0
°C
25°C
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPATION
:
P
D
/Pc
(mW)
AMBIENT TEMPERATURE : Ta (
°C)
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
20
0
20
40
60
80
100
20
80
PD
PC
100
120
60
40
0
Parameter
Symbol
VF
IR
ICEO
λP
IC
VCE(sat)
tr tf
Min.
0.2
Typ.
1.3
800
1.0
10
Max.
1.6
10
0.5
0.4
Unit
VIF
=50mA
VR
=5V
VCE
=10V
VCE
=5V, IF=20mA
IF
=20mA, IC=0.1mA
VCC
=5V, IF=20mA, RL=100
A
nm
mA
V
s
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
charac-
teristics
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
λP
fC
IF
=50mA
1
MHz
950
nm
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Photo
transistor
Infrared light emitter diode
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
30 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input
(LED
)
Output
photo-
transistor
(
)
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