參數(shù)資料
型號： RPI-221
元件分類： 開關(guān)
英文描述： 2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
封裝： ULTRA SMALL PACKAGE-4
文件頁數(shù)： 1/2頁
文件大小： 68K
代理商： RPI-221
RPI-221
Photointerrupter, Small type
Applications
Optical control equipment
Cameras
Floppy disk drives
Features
1) Ultra-small.
2) Minimal influence from stray light.
3) Low collector-emitter saturation voltage.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Cathode
Emitter
Gap
Cross-section A-A
Optical axis center
Anode
Through hole
A
2-R0.3
2-R0.15
C0.7
4.9
±0.3
2.6
1.5
2.6
3.3
2.3
±0.3
2
1
Min.5
(4)
4-0.2
1
0.5
4-0.5
4-0.4
(2)
(0.5)
0.4
4
2
4-
φ0.8
Fig.1 Relative output current vs.
distance ( )
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0.5
0
1.0
1.5
2.0
2.5
0
25
50
75
100
125
d
Fig.4 Relative output current vs.
distance ( )
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0.5
0
1.0
1.5
2.0
2.5
0
25
50
75
100
125
d
Fig.2 Forward current falloff
FORWARD
CURRENT
:
I
F
(mA)
AMBIENT TEMPERATURE : Ta (
°C)
20
0
20
40
60
80
100
10
50
40
30
20
0
Fig.10 Output characteristics
COLLECTOR
CURRENT
:
Ic
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
48
610
2
0
1.5
3.0
IF=50mA
40mA
30mA
20mA
10mA
td
tr
tf
10%
90%
RL
VCC
td
:
t r
:
t f
:
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from
90% to 10% of peak current)
Input
Output
Fig.11 Response time measurement circuit
Fig.8 Response time vs.
collector current
RESPONSE
TIME
:
t
(
s)
COLLECTOR CURRENT : Ic (mA)
100
0.1
1
10
1
10
100
1000
Ta
=25°C
Vcc
=5V
RL
=1k
RL
=500
RL
=100
Fig.9 Dark current vs.
ambient temperature
DARK
CURRENT
:
I
D
(nA)
AMBIENT TEMPERATURE : Ta (
°C)
25
0
25
50
75
100
0.1
1
10
100
1000
VCE=30V
VCE=20V
VCE=10V
Fig.6 Relative output vs. ambient
temperature
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
AMBIENT TEMPERATURE : Ta (
°C)
40 20
0
20406080
100
0
20
40
60
80
100
120
160
140
Fig.7 Collector current vs.
forward current
COLLECTOR
CURRENT
:
Ic
(mA)
FORWARD CURRENT : IF (mA)
010
20
30
40
50
0
1
2
3
4
5
FORWARD VOLTAGE : VF (
V)
FORWARD
CURRENT
:
I
F
(
mA
)
Fig.3 Forward current vs. forward
voltage
0.4
0.6
0.8
0.2
1.0
1.2
1.4
1.6
1.8
0
°C
25
°C
50
°C
75
°C
0
50
40
30
20
10
25°C
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPATION
:
P
D
/Pc
(mW)
AMBIENT TEMPERATURE : Ta (
°C)
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
20
0
20
PD
PC
40
60
80
100
0
20
40
60
80
100
120
Parameter
Symbol
VF
IR
ICEO
λP
IC
VCE(sat)
tr tf
Min.
0.2
Typ.
1.3
800
1.0
10
Max.
1.6
10
0.5
0.4
Unit
VIF
=50mA
VR
=5V
VCE
=10V
VCE
=5V, IF=20mA
IF
=20mA, IC=0.1mA
VCC
=5V, IF=20mA, RL=100
A
nm
mA
V
s
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
charac-
teristics
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
λP
fC
IF
=50mA
1
MHz
950
nm
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Photo
transistor
Infrared light emitter diode
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
30 to +100
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input
(LED
)
Output
photo-
transistor
(
)
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