參數(shù)資料
型號： RPI-243
元件分類： 開關(guān)
英文描述： 2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
文件頁數(shù)： 1/2頁
文件大?。?/td> 66K
代理商： RPI-243
RPI-243
Photointerrupter, Small type
Applications
Floppy disk drives
Printers
CD-ROM
Features
1) Compact package based on the
double-mold method.
2) High resolution (slit width = 0.4mm)
3) Gap between emitter and detector
is 2.0mm.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Through hole
Gap
Collector
Emitter
Cathode
Optical axis center
Anode
Cross-section A-A
A
4
2.5
4-
φ0.8
C0.5
+0.1
2-C0.3
0
φ1.5
5
4.2
1
2
2.8
5.2
Min.5
(1.5)
4-0.2
(4)
3.9
0.4
(1.2)
4-0.5
(2.5)
Fig.1 Relative output current vs.
distance ( )
Fig.4 Relative output current vs.
distance (
)
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0
1
1.5
0.5
2
2.5
3
100
75
50
25
0
Ta
=25°C
VCE
=5V
IF
=20mA
d
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0
1
1.5
0.5
2
2.5
100
75
50
25
0
Ta
=25°C
VCE
=5V
IF
=20mA
d
Fig.2 Forward current falloff
FORWARD
CURRENT
:
I
F
(mA)
AMBIENT TEMPERATURE : Ta (
°C)
20
0
20
40
60
80
100
10
50
40
30
20
0
Fig.10 Output characteristics
COLLECTOR
CURRENT
:
Ic
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
48
610
2
0
0.5
1
1.5
2
2.5
10mA
20mA
30mA
40mA
IF
=50mA
Fig.11 Response time measurement circuit
td
tr
tf
10%
90%
RL
VCC
td
:
t r
:
t f
:
Delay time
Rise time (time for output current to rise
from 10% to 90% of peak current)
Fall time (time for output current to fall
from 90% to 10% of peak current)
Input
Output
Fig.8 Response time vs.
collector current
RESPONSE
TIME
:
t
(
s)
COLLECTOR CURRENT : Ic (mA)
0.1
1
10
100
1
10
100
1000
Ta
=25°C
Vcc
=5V
RL
=1k
RL
=500
RL
=100
Fig.9 Dark current vs.
ambient temperature
DARK
CURRENT
:
I
D
(nA)
AMBIENT TEMPERATURE : Ta (
°C)
0
25
50
75
100
25
0.1
1
10
100
1000
VCE
=10V
VCE
=20V
VCE
=30V
Fig.6 Relative output vs. ambient
temperature
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
AMBIENT TEMPERATURE : Ta (
°C)
25
0
25
50
75
100
80
60
40
20
0
VCE
=5V
IF
=20mA
Fig.7 Collector current vs.
forward current
COLLECTOR
CURRENT
:
Ic
(mA)
FORWARD CURRENT : IF (mA)
0
1020304050
0
1
2
3
4
5
VCE
=5V
FORWARD VOLTAGE : VF (
V)
FORWARD
CURRENT
:
I
F
(
mA
)
Fig.3 Forward current vs. forward
voltage
0
10
20
30
40
50
0.4
0
0.8
1.2
2.0
1.6
75
°C
50
°C
25
°C
0
°C
25°C
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPATION
:
P
D
/Pc
(mW)
AMBIENT TEMPERATURE : Ta (
°C)
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
20
0
20
40
60
80
100
20
80
PD
PC
100
120
60
40
0
Parameter
Symbol
VF
IR
ICEO
λP
IC
VCE(sat)
tr tf
Min.
0.5
Typ.
1.3
800
10
Max.
1.6
10
0.5
0.4
Unit
VIF
=50mA
VR
=5V
VCE
=10V
VCE
=5V, IF=20mA
IF
=20mA, IC=0.3mA
VCC
=5V, IF=20mA, RL=100
A
nm
mA
V
s
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
charac-
teristics
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
λP
fC
IF
=50mA
1
MHz
950
nm
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Photo
transistor
Infrared light emitter diode
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
30 to +100
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input
(LED
)
Output
photo-
transistor
(
)
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