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參數(shù)資料
| 型號： | RMPA2265 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz |
| 中文描述： | 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1 MM HEIGHT, LEAD FREE, LCC-8 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 484K |
| 代理商： | RMPA2265 |
2004 Fairchild Semiconductor Corporation
RMPA2265 Rev.
E
R
Absolute Ratings
1
Note:
1:
No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics (1920 to 1980 MHz)
1
Notes:
1:
All parameters met at T
2:
All phase angles
3:
Guaranteed by design
C
= +25°C, V
CC
= +3.4V, V
REF
= 2.85V and load VSWR
≤
1.2:1, unless otherwise noted.
Symbol
, V
Parameter
Ratings
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Units
V
V
V
dBm
°C
V
V
V
P
T
CC1
CC2
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
REF
MODE
IN
STG
Symbol
f
WCDMA Operation
Gp
Parameter
Comments
Min
1920
Typ
Max
1980
Units
MHz
Operating Frequency
Power Gain
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode
Vmode = 0V
Vmode
≥
2.0V
Vmode = 0V
Vmode
≥
2.0V
Vmode
≥
2.0V, Vcc = 1.4V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode = 2.0V
26
28
26
dB
dB
dBm
dBm
%
%
%
mA
mA
≥
2.0V
Po
Linear Output Power
28
16
PAEd
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Leakage
Ratio
±5.00MHz Offset
1920–1980 MHz
42
9
25
440
120
Itot
ACLR1
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode
-40
-42
-54
-66
dBc
dBc
dBc
dBc
≥
2.0V
ACLR2
±10.00MHz Offset
1920–1980 MHz
≥
2.0V
General Characteristics
VSWR
NF
Rx No
2fo – 5fo
S
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression
Spurious Outputs
Ruggedness with Load
Mismatch
Case Operating Temperature
DC Characteristics
Iccq
Quiescent Current
Iref
Reference Current
Icc(off)
Shutdown Leakage Current
2.0:1
4
-139
dB
Po
Po
Load VSWR
No permanent damage
≤
≤
+28dBm, 2110 to 2170 MHz
+28dBm
≤
5.0:1
dBm/Hz
dBc
dBc
-50
-60
10:1
2, 3
3
Tc
-30
85
°C
Vmode
Po
≤
No applied RF signal
≥
2.0V
50
5
1
mA
mA
μA
+28dBm
5
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