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參數(shù)資料
| 型號(hào)： | RMPA2271 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector |
| 中文描述： | 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1 MM HEIGHT, LEAD FREE, LCC-8 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 373K |
| 代理商： | RMPA2271 |
2005 Fairchild Semiconductor Corporation
RMPA2271 Rev. B
1
www.fairchildsemi.com
May 2005
R
PRELIMINARY
RMPA2271
WCDMA/UMTS Power Edge Power Amplifier
Module with Integrated Power Detector
Features
■
Temperature compensated, integrated power detector with
>20dB dynamic range
41% WCDMA efficiency at +28dBm average output power
1920–1980MHz
Meets UMTS/WCDMA and HSDPA performance
requirements
Compact Lead-free compliant LCC package–
(3.0 x 3.0 x 1.0 mm nominal)
Single positive-supply operation and low power and
shutdown modes
Low Vref (2.85V) compatible with advanced handset
chipsets
Internally matched to 50
and DC blocked RF
input/output
■
■
■
■
■
■
General Description
The RMPA2271 Power Amplifier Module (PAM) is Fairchild’s
latest innovation in 50
matched, surface mount modules
targeting WCDMA/UMTS applications. Answering the call for
integrated Power Detection, the RMPA2271 offers the ability to
measure power output over a 20dB range. This feature
eliminates the need of an external power detector and lossy
directional coupler, improving system perfomance and reducing
overall cost. Simple two-state Vmode control is all that is
needed to change the PA optimization from high power to low
power mode to minimize current usage. The 3 x 3 x 1.0mm LCC
package fits into the tightest spaces available on handset
boards and is footprint compatible with existing 3 x 3mm LCC
power amplifiers. The multi-stage GaAs Microwave Monolithic
Integrated Circuit (MMIC) is manufactured using Fairchild’s
InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
4
4
3
3
2
2
1
1
8
8
7
7
6
6
5
5
DC Bias Control
Vcc2
RF OUT
GND
Vref
RF IN
Vcc1
MMIC
Input
Match
Output
Match
Vmode
Pdet
Power Detector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RMPA2450 | 2.4-2.5 GHz GaAs MMIC Power Amplifier |
| RMPA2451 | 2.4?2.5 GHz GaAs MMIC Power Amplifier |
| RMPA2451-TB | 2.4?2.5 GHz GaAs MMIC Power Amplifier |
| RMPA2453 | 2.4?2.5 GHz InGaP HBT Linear Power Amplifier |
| RMPA2455 | 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RMPA2450 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:2.4-2.5 GHz GaAs MMIC Power Amplifier |
| RMPA2451 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RMPA2451-TB | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:2.4?2.5 GHz GaAs MMIC Power Amplifier |
| RMPA2453 | 功能描述:射頻放大器 2.4-2.5 GHz InGaP HBT Linear Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| RMPA2455 | 功能描述:射頻放大器 2.4-2.5 GHz 1 Watt InGaP HBT RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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