參數(shù)資料
型號(hào)： RLP03N06CLE
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
中文描述： 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 8/13頁(yè)
文件大小： 188K
代理商： RLP03N06CLE
8
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
FIGURE 27. TIME TO 175
o
C IN CURRENT LIMITING
(HEATSINK THERMAL RESISTANCE = 10
o
C/W)
(HEATSINK THERMAL CAPACITANCE = 1.0J/
o
C)
FIGURE 28. TIME TO 175
o
C IN CURRENT LIMITING
(HEATSINK THERMAL RESISTANCE = 5
o
C/W)
(HEATSINK THERMAL CAPACITANCE = 2.0J/
o
C)
FIGURE 29. TIME TO 175
o
C IN CURRENT LIMITING (HEATSINK THERMAL RESISTANCE = 2
o
C/W)
(HEATSINK THERMAL CAPACITANCE = 4J/
o
C)
Performance Curves
(Continued)
10
8
6
4
2
0
50
70
90
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
10
STARTING T
J
= 100
o
C
STARTING T
J
= 125
o
C
STARTING T
J
= 150
o
C
STARTING T
J
= 75
o
C
10
8
6
4
2
0
50
70
90
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
10
STARTING T
J
= 125
o
C
STARTING T
J
= 150
o
C
STARTING T
J
= 75
o
C
STARTING T
J
= 100
o
C
10
8
6
4
2
0
50
70
90
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
10
STARTING T
J
= 125
o
C
STARTING T
J
= 150
o
C
STARTING T
J
= 75
o
C
STARTING T
J
= 100
o
C
相關(guān)PDF資料
PDF描述
RLD03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLESM 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLP1N06CLE 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場(chǎng)效應(yīng)管)
RLP1N08LE 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET
RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
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