型號: | RLP03N06CLE |
廠商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分類: | JFETs |
英文描述: | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
中文描述: | 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
文件頁數(shù): | 13/13頁 |
文件大?。?/td> | 188K |
代理商: | RLP03N06CLE |
相關(guān)PDF資料 |
PDF描述 |
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RLD03N06CLE | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
RLD03N06CLESM | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
RLP1N06CLE | 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場效應(yīng)管) |
RLP1N08LE | 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET |
RM100D2Z-40 | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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RLP03N10000JB00 | 功能描述:線繞電阻器 - 透孔 RLP 3 NI 1K 5% BL20NA e1 RoHS:否 制造商:Bourns 電阻:10 Ohms 容差:5 % 功率額定值:7 W 溫度系數(shù):200 PPM / C 系列:FW 端接類型:Axial 工作溫度范圍:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封裝:Ammo 產(chǎn)品:Power Resistors Wirewound High Energy |
RLP03N10000JB15 | 功能描述:線繞電阻器 - 透孔 RLP 3 NI 1K 5% BL20 e1 RoHS:否 制造商:Bourns 電阻:10 Ohms 容差:5 % 功率額定值:7 W 溫度系數(shù):200 PPM / C 系列:FW 端接類型:Axial 工作溫度范圍:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封裝:Ammo 產(chǎn)品:Power Resistors Wirewound High Energy |
RLP03N105R0FB15 | 功能描述:線繞電阻器 - 透孔 RLP 3 NI 105U 1% BL20 e1 RoHS:否 制造商:Bourns 電阻:10 Ohms 容差:5 % 功率額定值:7 W 溫度系數(shù):200 PPM / C 系列:FW 端接類型:Axial 工作溫度范圍:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封裝:Ammo 產(chǎn)品:Power Resistors Wirewound High Energy |
RLP03N10R00FB15 | 制造商:Vishay Dale 功能描述:RLP 3 NI 10U 1% BL20 E1 |
RLP03N10R00JB00 | 功能描述:線繞電阻器 - 透孔 RLP 3 NI 10U 5% BL20NA e1 RoHS:否 制造商:Bourns 電阻:10 Ohms 容差:5 % 功率額定值:7 W 溫度系數(shù):200 PPM / C 系列:FW 端接類型:Axial 工作溫度范圍:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封裝:Ammo 產(chǎn)品:Power Resistors Wirewound High Energy |