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參數資料
| 型號： | RLD03N06CLESM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數： | 4/13頁 |
| 文件大?。?/td> | 188K |
| 代理商： | RLD03N06CLESM |
4
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. SELF-CLAMPED INDUCTIVE SWITCHING
FIGURE 11. TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE
VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 0.30A
V
GS
= 5V,
PULSE DURATION = 250
μ
s,
0.0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
D
,
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0.0
0.5
1.0
1.5
2.0
G
,
V
GS
= V
DS
,
I
D
= 250
μ
A
T
I
D
= 20mA
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
B
D
,
S
T
J
, JUNCTION TEMPERATURE (
o
C)
t
AV
, TIME IN CLAMP (s)
0.01
0.1
1
10
I
(
,
0.1
1
+25
o
C
+50
o
C
+75
o
C
0.001
+100
o
C
+125
o
C
+150
o
C
TEMPERATURES LISTED ARE STARTING
JUNCTION TEMPERATURES
T
C
= +25
o
C
V
GS
= 0V,
FREQUENCY (f) = 1MHz
300
100
00
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10
15
20
25
C
C
RSS
200
C
OSS
C
ISS
60
45
30
15
0
)
)
---------------------
t, TIME (
μ
s)
(
)
)
---------------------
5.00
3.75
2.50
1.25
0.00
D
,
G
,
V
DD
= BV
DSS
R
L
= 600
I
G(REF)
= 0.1mA
V
GS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
10
40
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| RLD03N06CLESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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