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參數資料
| 型號： | RLD03N06CLESM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數： | 3/13頁 |
| 文件大?。?/td> | 188K |
| 代理商： | RLD03N06CLESM |
3
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. TYPICAL NORMALIZED DRAIN CURRENT vs
JUNCTION TEMPERATURE
FIGURE 4. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
1
10
100
I
D
,
0.1
1
175
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= +25
o
C
OPERATION IN THIS
AREA IS LIMITED BY
JUNCTION TEMPERATURE
25
o
C
DC
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
SINGLE PULSE
0.01
0.05
0.1
0.2
0.5
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-2
10
-1
P
DM
t
1
t
2
10
1
0.1
0.01
10
-5
10
-4
10
-3
10
0
10
1
D
,
2.0
1.0
0.5
0
-80
1.5
T
J
, JUNCTION TEMPERATURE (
o
C)
-40
0
40
80
120
160
200
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
D
,
PULSE DURATION = 250
μ
s, T
C
= +25
o
C
0
0.10
0.20
0.30
0
1.0
2.0
3.0
4.0
5.0
V
GS
= 3V
V
GS
= 4V
V
GS
= 7.5V
V
GS
= 5V
0.40
+25
o
C
+175
o
C
V
DD
= 15V
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
0.0
2.0
3.0
4.0
5.0
1.0
0
0.30
0.40
I
D
,
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
-55
o
C
0.50
0.60
0.20
0.10
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相關代理商/技術參數 |
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| RLD03N06CLESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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