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參數(shù)資料
| 型號： | RHRU15090 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 150A, 900V - 1000V Hyperfast Diodes |
| 中文描述： | 150 A, 900 V, SILICON, RECTIFIER DIODE |
| 封裝： | TO-218, 1 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 39K |
| 代理商： | RHRU15090 |
2
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
LIMITS
UNITS
RHRU15090
RHRU150100
MIN
TYP
MAX
MIN
TYP
MAX
V
F
I
F
= 150A, T
C
= +25
o
C
I
F
= 150A, T
C
= +150
o
C
V
R
= 900V, T
C
= +25
o
C
V
R
= 1000V, T
C
= +25
o
C
V
R
= 900V, T
C
= +150
o
C
V
R
= 1000V, T
C
= +150
o
C
-
-
3.0
-
-
3.0
V
V
F
-
-
2.5
-
-
2.5
V
I
R
-
-
500
-
-
-
μ
A
-
-
-
-
-
500
μ
A
I
R
-
-
3.0
-
-
-
mA
-
-
-
-
-
3.0
mA
t
RR
I
F
= 1A, dI
F
/dt = 100A/
μ
s
-
-
90
-
-
90
ns
I
F
= 150A, dI
F
/dt = 100A/
μ
s
-
-
100
-
-
100
ns
t
A
I
F
= 150A, dI
F
/dt = 100A/
μ
s
-
65
-
-
65
-
ns
t
B
I
F
= 150A, dI
F
/dt = 100A/
μ
s
-
30
-
-
30
-
ns
R
θ
JC
-
-
0.4
-
-
0.4
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
R
θ
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
C1
L
LOOP
DUT
Q
3
R
3
Q
4
Q
2
R
1
R
2
-V
4
Q
1
-V
2
0
0
+V
1
t
1
t
2
t
3
R
4
+V
3
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF R
4
+L
LOOP
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
R
4
t
A(MIN)
10
≤
I
F
t
RR
t
A
t
B
0
I
RM
0.25 I
RM
V
R
V
RM
dI
F
dt
RHRU15090, RHRU150100
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