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RHRU5070, RHRU5080, RHRU5090, RHRU50100
50A, 700V - 1000V Hyperfast Diodes
RHRU5070,
(TA49066) are hyperfast diodes with soft recovery character-
istics (t
RR
< 75ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
RHRU5080, RHRU5090 and RHRU50100
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Ordering Information
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<75ns
Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . .1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Package
JEDEC STYLE TO-218
Symbol
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRU5070
TO-218
RHRU5070
RHRU5080
TO-218
RHRU5080
RHRU5090
TO-218
RHRU5090
RHRU50100
TO-218
RHRU50100
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
ANODE
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RHRU5070
700
700
700
50
RHRU5080
800
800
800
50
RHRU5090
900
900
900
50
RHRU50100 UNITS
1000
1000
1000
50
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current. . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(T
C
= +65
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
-65 to +175
V
V
V
A
100
100
100
100
A
500
500
500
500
A
150
40
150
40
150
40
150
40
W
mj
o
C
-65 to +175
-65 to +175
-65 to +175
Data Sheet
April 1995
File Number
3665.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999