參數(shù)資料
型號(hào): RHRU10060
廠商: HARRIS SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: 100A, 600V Hyperfast Diode
中文描述: 100 A, 600 V, SILICON, RECTIFIER DIODE
文件頁(yè)數(shù): 3/3頁(yè)
文件大?。?/td> 42K
代理商: RHRU10060
3
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves
(Continued)
I
F
, FORWARD CURRENT (A)
100
10
1
0
10
20
30
40
50
60
t
rr
t
a
t
b
t
T
C
= 25
o
C, dI
F
/dt = 100A/
μ
s
T
C
, CASE TEMPERATURE (
o
C)
120
100
20
0
25
50
75
100
150
175
125
40
60
80
SQ. WAVE
DC
I
F
,
Test Circuits and Waveforms
FIGURE 5. t
rr
TEST CIRCUIT
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
+
-
dt
dI
F
I
F
t
rr
t
a
t
b
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
V
DD
L
R
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I
MAX
= 1.6A
L = 40mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RHRU10060
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