參數(shù)資料
型號: RHRU10060
廠商: HARRIS SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: 100A, 600V Hyperfast Diode
中文描述: 100 A, 600 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 2/3頁
文件大?。?/td> 42K
代理商: RHRU10060
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 100A
-
-
2.1
V
I
F
= 100A, T
C
= 150
o
C
-
-
1.7
V
I
R
V
R
= 600V
-
-
250
μ
A
V
R
= 600V, T
C
= 150
o
C
-
-
2.0
mA
t
rr
I
F
= 1A, dI
F
/dt = 100A/
μ
s
-
-
50
ns
I
F
= 100A, dI
F
/dt = 100A/
μ
s
-
-
60
ns
t
a
I
F
= 100A, dI
F
/dt = 100A/
μ
s
-
28
-
ns
t
b
I
F
= 100A, dI
F
/dt = 100A/
μ
s
-
18
-
ns
R
θ
JC
-
-
0.71
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 6), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
θ
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
I
F
,
500
100
10
1
0
0.5
1
1.5
2.5
3
2
25
o
C
100
o
C
175
o
C
V
R
, REVERSE VOLTAGE (V)
I
R
,
μ
A
5000
100
10
1
200
300
400
600
500
1000
25
o
C
100
o
C
175
o
C
100
0
RHRU10060
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