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參數(shù)資料
| 型號： | RFP7N40 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 7 A, 400 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 47K |
| 代理商： | RFP7N40 |
5-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
8
7
6
5
4
3
2
1
0
RFM7N40
RFP7N40
T
C
= 25
o
C
T
J
= MAX RATED
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0
I
D
,
I
D
(MAX)
CONTINUOUS
DCOPERATON
RFM7N35, RFP7N35
RFM7N40, RFP7N40
OPERATION IN
THIS AREA IS
LIMITED BY r
DS(ON)
RFM7N35, 40
RFP7N35, 40
0
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
8
12
16
20
16
12
8
4
0
I
D
,
PULSE DURATION = 80
μ
s
T
C
= 25
o
C
V
GS
= 7V TO 20V
V
GS
= 5V
V
GS
= 6V
V
GS
= 4V
0
2
4
6
8
10
16
12
8
4
0
V
GS
, GATE TO SOURCE (V)
I
D
,
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 125
o
C
V
DS
= 10V
PULSE DURATION = 250
μ
s
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
1.8
0.2
1.4
1
0.6
r
D
,
O
)
V
GS
= 10V
PULSE DURATION = 250
μ
s
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
RFM7N35, RFM7N40, RFP7N35, RFP7N40
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