- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374589 > RFP4N05L (INTERSIL CORP) 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | RFP4N05L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 4 A, 50 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | RFP4N05L |
6-277
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.5
1.0
0.5
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= 5V
I
D
= 4A
N
O
2.0
0
1.5
1.0
2.0
50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
N
T
V
GS
= V
DS
I
D
= 250
μ
A
200
0
0.5
0
10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
C
400
300
200
100
0
C
RSS
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
60
45
30
15
0
10
8
6
4
0
2
GATE
SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 15
I
G(REF)
= 0.095mA
V
GS
= 5V
V
G
,
t, TIME (
μ
s)
20
80
DRAIN SOURCE
I
G(REF)
I
G(ACT)
VOLTAGE
V
D
,
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP4N05L, RFP4N06L
相關PDF資料 |
PDF描述 |
|---|---|
| RFP4N06L | 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP4N05 | 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs |
| RFP4N06 | 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs |
| RFP4N35 | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs |
| RFP4N40 | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RFP4N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP4N06L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP4N100 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP4N35 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP4N40 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。