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參數(shù)資料
| 型號： | RFP4N05L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 4 A, 50 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | RFP4N05L |
6-274
File Number
2876.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP4N05L, RFP4N06L
4A, 50V and 60V 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFP4N05L and RFP4N06L are N-Channel enhancement
mode silicon gate power field effect transistors designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09520.
Features
4A, 50V and 60V
r
DS(ON)
= 0.800
Design Optimized for 5V Gate Drives
Can be Driven Directly from QMOS, NMOS,
TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power-Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEL TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N05L
TO-220AB
RFP4N05L
RFP4N06L
TO-220AB
RFP4N06L
NOTE: When ordering, include the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP4N06L | 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP4N05 | 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs |
| RFP4N06 | 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs |
| RFP4N35 | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs |
| RFP4N40 | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP4N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP4N06L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP4N100 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP4N35 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP4N40 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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