參數(shù)資料
型號(hào): RFP2N20
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET
中文描述: 2 A, 200 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 40K
代理商: RFP2N20
4-520
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
P
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
2.5
1.5
1.0
0.5
2.0
1
0.10
0.01
10
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
1
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
1000
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
C
3
2.5
2
0
0
1
2
3
4
5
6
7
I
D
,
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
0.5
1
1.5
V
GS
= 4V
V
GS
= 5V
V
GS
= 6V
V
GS
= 7V
V
GS
= 20V
V
GS
= 10V
V
GS
= 8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
25
o
C
I
D
,
1.5
1
0.5
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
2
0
2.5
3
V
DS
= 15V
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
125
o
C
125
o
C
-40
o
C
25
o
C
-40
o
C
r
D
,
I
D,
DRAIN CURRENT (A)
3
2
1
0
0
1
2
R
)
4
5
6
0.5
1.5
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2.5
25
o
C
125
o
C
-40
o
C
RFP2N20
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