參數(shù)資料
型號: RFP2N10L
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述: 2 A, 100 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 4/5頁
文件大?。?/td> 35K
代理商: RFP2N10L
6-251
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE TO THRESHOLD vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuit and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0
100
0
50
150
200
1.0
1.5
0.5
I
D
= 2A, V
GS
= 5V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
N
O
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
1.0
0.5
0
0
200
50
100
150
1.5
2.0
I
D
= 250
μ
A
V
DS
= V
GS
0
20
30
40
70
C
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
240
200
160
0
10
120
80
C
ISS
C
RSS
50
C
OSS
40
60
V
GS
= 0V, f = 0.1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
100
75
25
0
20
)
)
IG ACT
t, TIME (ms)
80
)
)
IG ACT
10
8
6
2
0
V
D
,
V
G
,
V
DD
= BV
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
R
L
= 50
, V
GS
= 5V
I
G(REF)
= 0.094mA
DESCENDING ORDER:
50
4
DRAIN SOURCE VOLTAGE
SGATE
VOLTAGE
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP2N08L, RFP2N10L
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP2N12 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
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RFP2N15 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:RCA 功能描述:MOSFET 制造商:Harris Corporation 功能描述:
RFP2N15L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-220AB
RFP2N18 制造商:Harris Corporation 功能描述: