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參數(shù)資料
| 型號： | RFP25N06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 25 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 104K |
| 代理商： | RFP25N06 |
4-506
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
5
0
25
50
75
100
125
150
20
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
175
25
30
15
10
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
-5
10
1
P
DM
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
10
-4
T
Z
θ
J
N
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
A
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
1
100
10
1
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
μ
s
1ms
10ms
100ms
DC
200
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
D
,
200
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
V
GS
= 20V
T
C
= 25
o
C
RFP25N05
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP25N06L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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| RFP2N08L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs |
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