![](http://datasheet.mmic.net.cn/390000/RF2046PCBA-41X_datasheet_16829947/RF2046PCBA-41X_1.png)
4-173
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
InGaP/HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
1
3
2
4
RF OUT
RF IN
GND
GND
MARKING - C6
RF2046
GENERAL PUR POS E AMPLIFIER
Broadband, Low Noise Gain Blocks
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Final PA for Low Power Applications
High Reliability Applications
Broadband Test Equipment
The RF2046 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
Ω
gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 3000MHz.
The device is self-contained with 50
Ω
input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.
DC to 3000MHz Operation
Internally matched Input and Output
22dB Small Signal Gain
3.0dB Noise Figure
10mW Linear Output Power
Single Positive Power Supply
RF2046
RF2046PCBA-41XFully Assembled Evaluation Board
General Purpose Amplifier
0
Rev A11 050207
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
3. Dimension applies to ceramic lid minus epoxy coating.
0.070
sq.
45° ± 1°
0.068
± 0.002
0.052
0.041
0.025
± 0.002
3
0.005
± 0.002
0.015-0.001
0.020
± 0.002
0.040
± 0.002
0.200 Sq.
Typ.
Package S tyle: Mic ro-X Ceramic
9