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參數(shù)資料
| 型號(hào)： | RF1S530SM9A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直|第14A條（?。﹟對(duì)263AB |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 94K |
| 代理商： | RF1S530SM9A |
2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
5
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
5
10
15
I
D
,
V
GS
= 6V
V
GS
= 10V
20
4
V
GS
= 4V
V
GS
= 7V
V
GS
= 5V
25
V
GS
= 8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
4
6
8
10
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.1
1
10
I
D
,
100
25
o
C
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
0
0.6
0.9
1.2
12
24
36
48
r
D
,
)
I
D
, DRAIN CURRENT (A)
60
1.5
0
0.3
V
GS
= 20V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-60
-40
-20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
100 120 140 160 180
2.4
80
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 14A
1.25
1.05
0.95
0.85
0.75
-60 -40 -20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
B
100 120 140 160 180
1.15
80
I
D
= 250
μ
A
1500
300
0
1
10
10
2
C
900
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1200
600
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
RF1S530SM
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