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參數(shù)資料
| 型號： | RF1S530SM9A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直|第14A條（?。﹟對263AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 94K |
| 代理商： | RF1S530SM9A |
2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
6
3
0
25
50
75
100
125
150
12
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
15
175
9
t
P
, RECTANGULAR PULSE DURATION (s)
10
Z
θ
J
,
10
-3
10
-2
0.1
1
1
10
-5
10
-4
10
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
0.1
0.02
0.01
0.2
0.5
0.05
SINGLE PULSE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
10
1
I
D
,
10
2
10
2
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
= 175
o
C
SINGLE PULSE
100
μ
s
10
μ
s
1ms
10ms
10
3
1
10
3
T
C
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
0
10
20
30
40
5
10
15
20
25
50
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
GS
= 8V
RF1S530SM
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| RF1S530SM9AS2457 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| RF1S540SM9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 28A I(D) | TO-263AB |
| RF1S60P03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
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